The reactive sintered silicon carbide is prepared by mixing α-SiC and graphite powder into a green body in a certain proportion and heating to react with molten liquid Si or gas phase Si to form β-SiC. Sintering temperature is low (1400 ~ 1600 ℃), can produce complex shape of the product, the disadvantage is the residual body of 8% to 20% of the free silicon, limiting its high temperature mechanical properties and strong acid and alkali applications.
